MANY-VALUED R-S MEMORY CIRCUITS

Author:

PETRÍK MILAN1

Affiliation:

1. Department of Cybernetics, Czech Technical University, Technicka 2, Prague, 166 27, Czech Republic

Abstract

In this paper we present a many-valued memory circuit based on a generalization of the R-S memory circuit known from the two-valued logical circuits. Based on this many-valued R-S memory circuit we introduce a many-valued level-controlled memory circuit and a many-valued edge-controlled memory circuit of type “master-slave”. We discuss problems of the stability of the circuit with respect to small errors of input and output signals as well as to small errors of the gates. We show that the stability can be preserved by restricting the set of logical values, i.e. the interval [0, 1], to a finite discrete subset of this interval. We find the set of many-valued operations which are suitable for the implementation of the many-valued R-S memory circuit.

Publisher

World Scientific Pub Co Pte Lt

Subject

Artificial Intelligence,Information Systems,Control and Systems Engineering,Software

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3