Affiliation:
1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Abstract
Tb2O3:Er light-emitting diodes were prepared by radio-frequency magnetron sputtering method and the EL performance of the devices were studied. The crystal structure and morphology of the annealed films were investigated by XRD and SEM, respectively. The EL spectrum was achieved and the EL principle was discussed. Six emission peaks of Er[Formula: see text] located at 402, 517, 548, 649, 691, and 1,538[Formula: see text]nm were observed, achieving energy transfer from Tb[Formula: see text] to Er[Formula: see text]. In order to study the effect of Er+ doping concentration, the doping concentrations of Tb2O3:Er films were from 5[Formula: see text]at.% to 20[Formula: see text]at.%. The effect on electroluminescence intensity of doping concentration was investigated and the optimal doped concentration was 15[Formula: see text]at. %.
Funder
National Natural Science Foundation of China
Publisher
World Scientific Pub Co Pte Lt
Subject
Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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