Third harmonic generation in ZnO semiconductor using the simplified bond hyperpolarizability model-Reference-Cited by-同舟云学术

Third harmonic generation in ZnO semiconductor using the simplified bond hyperpolarizability model

Published:2018-09 Issue:03 Volume:27 Page:1850025
ISSN:0218-8635
Container-title:Journal of Nonlinear Optical Physics & Materials
language:en
Short-container-title:J. Nonlinear Optic. Phys. Mat.

Author:

Hardhienata Hendradi¹,Priyadi Ignu¹,Nurjanati Bayti¹,Alatas Husin¹

Affiliation:

1. Theoretical Physics Division, Department of Physics, Bogor Agricultural University, JL, Meranti, Kampus IPB Dramaga, Bogor 16680, Jawa Barat, Indonesia

Abstract

We describe the fourth rank tensor and the related third harmonic generation (THG) light intensity profile in a (0002) wurtzite structure using the simplified bond hyperpolarizability model (SBHM). We show that the resulting THG intensity is isotropic e.g., does not depend on the azimuthal rotation angle of the material. Assuming that THG inside wurtzite structures are dominated solely by bulk dipoles, only one fitting parameter in terms of the effective THG hyperpolarizability is required to generate the Rotational Anisotropy THG (RATHG) experiment result.

Publisher

World Scientific Pub Co Pte Lt

Subject

Physics and Astronomy (miscellaneous),Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S021886351850025X

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