Low Power Static Random-Access Memory Cell Design for Mobile Opportunistic Networks Sensor Nodes

Author:

Sachdeva Ashish1ORCID

Affiliation:

1. Electronics and Communication Department, Chandigarh University, Mohali, Punjab, India

Abstract

In the present scenario, the devices supporting neighbor discovery are going through the renovation phase, and crossing the classical barrier such as the trade-off between power dissipation and access time. The presence of opportunistic nodes in place of static nodes has presented multiple challenges for such devices. Therefore, the focus of neighbor discovery has mostly shifted toward such issues where power dissipation and latency of mobile nodes need to be simultaneously improved to achieve uninterrupted and quality communication. Since static random-access memory (SRAM) is an integral part of all such sensor nodes and directly impacts power dissipation and latency, therefore in this paper, we have introduced a novel SRAM cell for such nodes. The proposed eleven transistors (11T) SRAM cell is compared with six recently reported designs to check the improvement of SRAM key design parameters. The compared designs include Standard 6T (S6T), tunable 8T(TU8T), PPN-based 10T (PN10T), Schmitt trigger-based 10T (S10T), bit-line-dependent 11T (DP11T) bit-cell and stable low power 11T (SP11T). The improvement in write ability and read stability of proposed 11T cell is represented by [Formula: see text] and [Formula: see text] enhancement of write and read static margins, respectively, in comparison to S6T/TU8T/PN10T/S10T/DP11T/SP11T. Further, the leakage power dissipation is reduced by [Formula: see text] as compared to S6T/TU8T/S10T/PN10T/DP 11T/SP11T. Additionally, power dissipation and delay of proposed 11T cell during read operation is reduced by [Formula: see text] and [Formula: see text], respectively, as compared to S6T/TU8T/PN10T/S10T/DP11T/SP11T. It is worth mentioning here that the proposed 11T also shows narrower variability in power dissipation and current values during read operation comparing S6T. The proposed 11T design successfully mitigates the half-select issue and allows the SRAM array to attain the bit-interleaved architecture implementation.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Media Technology

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ultra-Low Power 9T FinFET Based SRAM Cell for IoT Applications;Journal of Electrical Systems;2024-04-24

2. Design of a Power-Efficient Static Random Access Memory Cell with Enhanced Stability for Internet of Things Applications;2024 IEEE 13th International Conference on Communication Systems and Network Technologies (CSNT);2024-04-06

3. A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time;AEU - International Journal of Electronics and Communications;2023-04

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