Design of Bulk Acoustic Wave Filters for Beidou Receiver-Reference-Cited by-同舟云学术

Design of Bulk Acoustic Wave Filters for Beidou Receiver

Published:2014-11-27 Issue:02 Volume:24 Page:1550018
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

Lu Tingting¹,Wang Shuai¹,Zhang Hao¹,Xu Lingwei¹,Gulliver T. Aaron²

Affiliation:

1. Department of Electrical Engineering, Ocean University of China, No. 238 Songling Road, Qingdao 266100, P. R. China

2. Department of Electrical and Computer Engineering, University of Victoria, Victoria, BC, V8S 4W9, Canada

Abstract

Based on the thin-film bulk acoustic resonator (FBAR) technology, a new narrow-band bulk acoustic wave (BAW) filter for Beidou B1 band receiver is designed. The aluminum nitride thin film is used as a piezoelectric layer. The Mason model of air-gap TFBAR (AGR) resonators is established in advanced design system to investigate the relationship between electrical impedance and physical parameters. The simulation results illustrate the effect of the area of parallel unit and the number of resonators on the performance of the BAW filters. By changing the series-parallel unit series and area ratio, the pass band of the BAW filter can reach 1556–1566 MHz, and the out-of-band rejection and the insertion loss can reach 47.5 dB and 3.0 dB, respectively.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218126615500188

Reference3 articles.

1. Surface micromachined AlN thin film 2GHz resonator for CMOS integration

2. Modified Mason model for bulk acoustic wave resonators

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