Automation Software for Semiconductor Research Laboratories: Electrical Parameter Calculation Program (SeCLaS-PC)

Author:

Akkaya A.1,Ayyıldız E.2

Affiliation:

1. Chemistry and Chemical Processing Technology Department, Mucur Vocational School, Ahi Evran University, 40500 Mucur/Kırşehir, Turkey

2. Department of Physics, Faculty of Science, Erciyes University, 38039 Kayseri, Turkey

Abstract

We prepared a simple program for basic electrical measurements and parameter extraction from these measurements of metal–semiconductor (MS) contacts. In this paper, we introduce a basic electrical parameter calculation software (SeCLaS-PC) for semiconductor laboratories from the temperature-dependent/independent current–voltage ([Formula: see text]–[Formula: see text]), capacitance– voltage ([Formula: see text]–[Formula: see text]) and capacitance–frequency ([Formula: see text]–[Formula: see text]) measurement results. SeCLaS-PC program was developed using Keysight VEE Pro (Visual Engineering Environment) software and the program has a user-friendly graphical interface. More than 50 device parameters can be easily obtained, using different methods, from the [Formula: see text]–[Formula: see text], temperature-dependent [Formula: see text]–[Formula: see text] and temperature-dependent [Formula: see text]–[Formula: see text] measurement results for one device, with our SeCLaS-PC program.

Funder

the Scientific and Technological Research Council of Turkey

the Scientific Research Projects Unit of Erciyes University

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Reference33 articles.

1. D. K. Schröder, Semiconductor Material and Device Characterization, John Wiley & Sons, New York (2006), p. 781.

2. E. H. Rhoderick and R. H. Williams, Metal–semiconductor Contacts, Clarendon Press, Oxford (1988), p. 832.

3. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons Inc., New Jersey, 2006), p. 832.

4. Extraction of Schottky diode parameters from forward current‐voltage characteristics

5. A modified forward I‐V plot for Schottky diodes with high series resistance

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