Automation Software for Semiconductor Research Laboratories: Electrical Parameter Calculation Program (SeCLaS-PC)
Author:
Affiliation:
1. Chemistry and Chemical Processing Technology Department, Mucur Vocational School, Ahi Evran University, 40500 Mucur/Kırşehir, Turkey
2. Department of Physics, Faculty of Science, Erciyes University, 38039 Kayseri, Turkey
Abstract
Funder
the Scientific and Technological Research Council of Turkey
the Scientific Research Projects Unit of Erciyes University
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0218126620502151
Reference33 articles.
1. D. K. Schröder, Semiconductor Material and Device Characterization, John Wiley & Sons, New York (2006), p. 781.
2. E. H. Rhoderick and R. H. Williams, Metal–semiconductor Contacts, Clarendon Press, Oxford (1988), p. 832.
3. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons Inc., New Jersey, 2006), p. 832.
4. Extraction of Schottky diode parameters from forward current‐voltage characteristics
5. A modified forward I‐V plot for Schottky diodes with high series resistance
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