Low-Mismatch and Low-Loss Transformer-Based SPDT Switch with Switching Load Technique for 5G Applications

Author:

Quan Xing12,Zhan Jinsong1,Luo Jiang3,Su Guodong4,Wang Xiang4

Affiliation:

1. School of Mechano-electronic Engineering, Xidian University, Xi’an 710071, P. R. China

2. State Key Laboratory of Millimeter Waves, Nanjing 210096, P. R. China

3. Nanjing Electronic Devices Institute, Nanjing 210016, P. R. China

4. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, P. R. China

Abstract

This paper proposes a switching load technique to improve the mismatch at outputs of the transformer-based single pole double throw (SPDT) switch, thus improving the insertion loss (IL) performance. A switch is introduced as the load of the primary inductor of the conventional transformer-based SPDT switch to improve the IL performance in transmission and receiving operation modes. A transformer-based SPDT switch is implemented with the switching load technique in TSMC 40[Formula: see text]nm CMOS technology. The transformer which has a symmetrical shape is implemented with the thick metal for low IL propose. The simulated results show that the proposed SPDT switch achieves a minimum insertion loss of 1.64[Formula: see text]dB and the IL is better than 2.2[Formula: see text]dB across the range from 24 to 35[Formula: see text]GHz. The proposed SPDT switch occupies a core area of [Formula: see text]m2 and the return losses are better than [Formula: see text][Formula: see text]dB at 24–35[Formula: see text]GHz.

Funder

State Key Laboratory of Millimeter Waves

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

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