A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15 μm GaAs pHEMT Technology

Abstract

This paper puts forward an extended-dynamic-range successive detection logarithmic amplifier (SDLA) for [Formula: see text]-band (18–26.5[Formula: see text]GHz) applications. A novel single-transistor power detection unit (PDU) is used instead of a conventional rectifier to effectively improve the dynamic range–bandwidth product of the amplifier. Circuit analysis and mathematical modeling are performed for the proposed PDU and the SDLA, respectively. Transistor level design is carried out for the whole circuit using 0.15[Formula: see text][Formula: see text]m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology. The SDLA presents a wide dynamic range of 75[Formula: see text]dB with a [Formula: see text] 1.5[Formula: see text]dB logarithmic error, over the entire band of interest, and consumes 340[Formula: see text]mW from [Formula: see text] 2.5[Formula: see text]V and –0.8[Formula: see text]V power supplies. All requirements are verified in post-layout simulation using ADS software. Thermal simulation and statistical yield analysis are performed to ensure the robustness of the proposed architecture.