A High Bandwidth Compact Integrable Configuration of Floating Memristor Emulator

Abstract

A compact memristor emulator structure using ten CMOS transistors-based structures is presented with a fully floating circuit configuration. Along with the use of such a compact CMOS structure to form a transconductance cell, the circuit requires only a single grounded capacitance and two external MOS transistors. Unlike several externally employed transconductance cells-based memristor emulators reported previously, the proposed circuit can be considered a compact architecture due to the non-employment of any external multiplier and floating passive elements, and also a lesser number of used transistors. The electronic tunability and wide-band operating frequency range (400[Formula: see text]Hz–50[Formula: see text]MHz) are the other attractive features of the proposed emulator. The circuit has been tested by performing simulations using PSPICE with 0.18[Formula: see text][Formula: see text]m CMOS technology. The presented simulation results clearly show the ideal non-volatile nature found in the realized memristor, which has also been employed in a neuron circuit based on the proposed emulator depicted in the article. The neuron circuit has been used to generate a spike output by applying a post-synaptic signal equivalent DC input. Finally, the circuit idea of the proposed memristor emulator has been tested by using commercial IC LM13700.