A Low-Power High Gain and High Linearity CMOS RF Front-End Design Involving a Charge Injection Mixer for V2X Technology

Abstract

In this paper, an RF front-end (RFFE) circuit consisting of a low noise amplifier (LNA) and a down-conversion mixer for vehicle-to-everything (V2X) applications in a 65-nm CMOS process is presented. V2X standard has a carrier frequency of 5.9[Formula: see text]GHz with 10 and 20[Formula: see text]MHz bandwidth options. The LNA topology of the RFFE is based on an inductively degenerated cascode common source differential approach. The mixer design uses a double-balanced topology with a charge injection method to enhance the linearity and noise figure performance. The RFFE design shows a single sideband integrated noise figure of 4.47[Formula: see text]dB with a total conversion gain of 28[Formula: see text]dB. The IIP3 is obtained as [Formula: see text]17[Formula: see text]dBm with charge injection in the mixer which is an improvement of 5[Formula: see text]dB as compared to no charge injection. The design consumes a total current of 10.24[Formula: see text]mA from a 1.2-V supply. This work is the first CMOS RFFE design implemented for V2X applications.