High-Speed and Energy-Efficient Sense Amplifier-Reference-Cited by-同舟云学术

High-Speed and Energy-Efficient Sense Amplifier

Published:2022-10-27 Issue:06 Volume:32 Page:
ISSN:0218-1266
Container-title:Journal of Circuits, Systems and Computers
language:en
Short-container-title:J CIRCUIT SYST COMP

Author:

Upadhyaya Yogendra Kumar¹^ORCID,Hasan Mohd²

Affiliation:

1. Department of Electronics & Communication Engineering, Chandigarh University, Mohali 140413, Punjab, India

2. Aligarh Muslim University, Aligarh 202002, Uttar Pradesh, India

Abstract

Sense amplifier is a key element of memory and a CMOS-based spin hybrid circuit. Magnetic tunnel junction (MTJ) is a key spintronic device used in spin-based memory and hybrid circuits. This paper presents a design of a voltage-controlled magnetic anisotropy MTJ-based sense amplifier (VCMA-SA) that offers better reliability, power efficiency and high-speed performance. MTJ switching between different resistive states in this paper takes place through the faster and energy-efficient voltage-controlled magnetic anisotropy (VCMA) scheme rather than the traditional spin-transfer torque (STT)-based magnetization switching. This paper demonstrates that SA based on VCMA-MTJ switching is faster, reliable and more energy-efficient compared with iPMA-based STT switching.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218126623500986

Reference20 articles.

1. Evaluation of Operating Margin and Switching Probability of Voltage- Controlled Magnetic Anisotropy Magnetic Tunnel Junctions

2. Spintronics: A Spin-Based Electronics Vision for the Future

3. High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits