A New Tune-Dependent Multiple-Gated Transistor Linearization Technique

Author:

Rezaei Farzan1ORCID

Affiliation:

1. Electrical and Computer Engineering Department, University of Kashan, Kashan 8731753153, Iran

Abstract

In this paper, a new multiple-gated transistor (MGTR) linearization technique is presented. To simultaneously keep linearity and tuning capability of proposed operational transconductance amplifier (OTA), the auxiliary transistors which are employed for [Formula: see text] cancellation of differential pair (DP) stage are body-driven through a tune-dependent voltage. By this way, the third-order nonlinearity of DP is reduced for a wide range of transconductance values from 5.1 to 35.6[Formula: see text][Formula: see text]A/V. The OTA works with 1.2[Formula: see text]V supply voltage and its power consumption changes between 137.4 and 156[Formula: see text][Formula: see text]W at the entire tuning range. For [Formula: see text][Formula: see text][Formula: see text]A/V ([Formula: see text][Formula: see text]V) and for 0.6[Formula: see text][Formula: see text] input voltage, the simulation results show 6[Formula: see text]dB reduction in the total harmonic distortion (THD) of proposed OTA when the MGTR linearization technique is used and 15[Formula: see text]dB reduction when the tune-dependent body driving is also utilized. The proposed OTA is employed in a third-order low-pass Butterworth filter which is tunable from 2 to 18[Formula: see text]MHz. The in-band IIP3 of filter is 16.9 and 12.4[Formula: see text]dBm, respectively, for 2 and 18[Formula: see text]MHz cutoff frequencies while the two-tone input voltage is applied at 1[Formula: see text]MHz.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

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