Affiliation:
1. Department of Electrical and Information Engineering, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 01811, Korea
Abstract
This work presents a low-noise, low-power receiver RF front-end integrated circuit (IC) for 402–405[Formula: see text]MHz medical implant communications service (MICS) band applications using 0.18-[Formula: see text]m CMOS process. The proposed front-end employs an AC-coupled current mirroring amplifier in between the low-noise current-reuse transconductor amplifier and a single-balanced IQ mixer for improved gain and noise performance in comparison to previous works. The designed front-end IC achieves a simulated performance of 36.5[Formula: see text]dB conversion gain, 1.85[Formula: see text]dB noise figure, and IIP3 of [Formula: see text][Formula: see text]dBm while consuming 440[Formula: see text][Formula: see text]W from 1-V voltage supply. The consumed core layout area, including I/Q LO generation and current bias circuits, is only 0.29[Formula: see text]mm2.
Funder
Seoul National University of Science and Technology
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture
Cited by
2 articles.
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