Frequency-Compensated Bulk-Driven TIA Suitable for Low-Voltage Low-Power Applications

Author:

Bansal Urvashi1,Gupta Maneesha1,Raj Niranjan2

Affiliation:

1. Netaji Subhas University of Technology, New Delhi, India

2. Indian Institute of Technology, Dhanbad, India

Abstract

The importance of a transimpedance amplifier in an optical transceiver is very well known. In this paper, a novel CMOS design of the bulk-driven transimpedance amplifier (BD-TIA) is given where the bridge-shunt peaking-based frequency compensation technique is exploited to improve frequency response. A pre-existing active inductor has been used for the same. The electrical characteristics and functioning of this inductor simulator make it a suitable alternative to both floating and grounded spiral inductors. In order to verify the workability of the proposed circuit, it has been simulated with TSMC CMOS 0.18[Formula: see text][Formula: see text]m process parameters. The proposed circuit is useful in low-voltage low-power VLSI applications as it uses a single supply of 0.75[Formula: see text]V. The power consumption of BD-TIA is very low, being 0.37[Formula: see text]mW, because a standard MOSFET has been replaced by a bulk-driven MOSFET (BDMOS), while the 3-dB bandwidth is observed to be 4.5[Formula: see text]GHz. The mathematical investigation and small signal analysis show that the simulation results are in good agreement.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture

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