Affiliation:
1. Department of ECE, National Institute of Technology, Agartala, Agartala, Tripura 799046, India
Abstract
Due to technological advancements and voltage scaling, leakage power has become an important concern in CMOS design. The implementation of a field-programmable gate array (FPGA) circuit utilizes a portion of the FPGA’s resources as compared to an application-specific integrated circuit (ASIC). Both the utilized and unutilized parts of the FPGA dissipate leakage power. In this work, two dynamic power gating techniques, PSG-1 and PSG-2, are proposed, which are able to reduce the leakage power of the 6-input look-up table (LUT) used in the Xilinx Spartan-6 series. The obtained results show that the proposed approaches PSG-1 and PSG-2 reduce average leakage power by 54.61% and 66.69%, respectively, at the expense of nominal area and delay overhead. The proposed method is also capable of lowering the average total power of the 6-input LUT. The suggested PSG-1 and PSG-2 approaches reduce average power by 53.75% and 60.83%, respectively. However, header-based power supply gating is extremely vulnerable to the negative-bias temperature instability (NBTI) aging effect and, due to this, the lifetime of the circuit is reduced considerably. Therefore, in this work, lifetime estimation-based analysis is performed by varying the stress probability of the sleep transistor. The results show that the LUT with PSG-1 and PSG-2 techniques has a lifetime of 4.55 years and 11.13 years, respectively. The stress time of the sleep transistor is 50% for the PSG-1 technique and 25% for the PSG-2 technique, respectively.
Publisher
World Scientific Pub Co Pte Ltd
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electrical and Electronic Engineering,Hardware and Architecture
Cited by
2 articles.
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