Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots-Reference-Cited by-同舟云学术

Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots

Published:1997-06-30 Issue:15 Volume:11 Page:673-679
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Niculescu Ecaterina C.¹,Niculescu Ana¹

Affiliation:

1. Department of Physics, "Politehnica" University of Bucharest, 77206 Bucharest, Romania

Abstract

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga 1-x Al x As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984997000827

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