SYNTHESIS OF HIGH QUALITY CRYSTALLINE C-N FILMS ON SILICON

Abstract

High quality crystalline C–N films have been synthesized via hot filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that a high density of crystalline clusters has been achieved. The clusters are composed of small columnar crystals (20–200 nm across) with hexagonal facets. Energy dispersive X ray analysis indicates a relative nitrogen:carbon composition of 1.30–2.5. X ray diffraction results indicate the films composed of β- and α- C 3 N 4 phases. Together with transmission electron microscopy analyses, we suggest that an interfacial layer C 3−x Si x N 4 is formed between the silicon substrate and the crystalline carbonnitride films.