A wideband CMOS single-ended low noise amplifier employing negative resistance technique-Reference-Cited by-同舟云学术

A wideband CMOS single-ended low noise amplifier employing negative resistance technique

Published:2018-02-28 Issue:06 Volume:32 Page:1850068
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Guo Benqing¹^ORCID,Chen Hongpeng¹,Wang Xuebing¹,Chen Jun¹,Li Yueyue¹,Jin Haiyan¹,Yang Yongjun¹

Affiliation:

1. Department of Communication Engineering, University of Electronic Science and Technology of China, 2006 Xiyuan Avenue, West High-Tech Zone, Chengdu 611731, China

Abstract

A wideband common-gate CMOS low noise amplifier with negative resistance technique is proposed. A novel single-ended negative resistance structure is employed to improve gain and noise of the LNA. The inductor resonating is adopted at the input stage and load stage to meet wideband matching and compensate gain roll-off at higher frequencies. Implemented in a 0.18 [Formula: see text]m CMOS technology, the proposed LNA demonstrates in simulations a maximal gain of 16.4 dB across the 3 dB bandwidth of 0.2–3 GHz. The in-band noise figure of 3.4–4.7 dB is obtained while the IIP3 of 5.3–6.8 dBm and IIP2 of 12.5–17.2 dBm are post-simulated in the designed frequency band. The LNA core consumes a power dissipation of 3.8 mW under a 1.5 V power supply.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984918500689

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