DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY-Reference-Cited by-同舟云学术

DEFECT CHARACTERIZATION OF HIGH THERMAL CONDUCTIVITY CaF2 DOPED AlN CERAMICS BY RAMAN SPECTROSCOPY

Published:2009-12-30 Issue:31n32 Volume:23 Page:3869-3876
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

LEE HYEON-KEUN¹,KIM DO KYUNG¹

Affiliation:

1. Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea

Abstract

Calcium fluoride additive was used to produce high thermal conductivity AlN ceramics which has no grain boundary phase. Thermal conductivity of AlN is determined by the point defect, represented as oxygen related defect, within the AlN grain. The defect density characterization of high thermal conductivity CaF 2 doped AlN ceramics after heat treatment was conducted by Raman spectroscopy. As measure Raman linewidth broadening, the point defect density variation after heat treatment and corresponding thermal conductivity change was investigated.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984909021934

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