Built-in-polarization effect on relaxation time and mean free path of phonons in AlxGa1−xN/GaN heterostructure

Abstract

In this paper, we have theoretically investigated the effect of built-in-polarization field on various phonon scattering mechanisms in Al[Formula: see text]Ga[Formula: see text]N/GaN heterostructure. The built-in-polarization field enhances the elastic constant, phonon velocity and Debye frequency of Al[Formula: see text]Ga[Formula: see text]N alloy. As a result, various phonon scattering mechanisms are modified. Important phonon scattering mechanisms such as normal scattering, Umklapp scattering, point defect scattering, dislocation scattering and phonon–electron scattering processes have been considered. The combined relaxation time due to above scattering mechanisms has also been computed as a function of phonon frequency for various Al contents at room temperature. Our result shows that built-in-polarization field suppresses scattering rates leading to enhanced combined relaxation time. Increased relaxation time implies longer phonon mean free path and enhanced optical and thermal transport properties. The result can be used to determine the effect of built-in-polarization field on optical and thermal properties of Al[Formula: see text]Ga[Formula: see text]N/GaN heterostructure and will be useful, particularly, for improvement of thermoelectric performance of Al[Formula: see text]Ga[Formula: see text]N/GaN heterostructure through polarization engineering.