Pb-DOPING EFFECTS IN Hg1−xPbxBa2Ca2Cu3O8+δ

Author:

XUE Y.Y.1,HUANG Z.J.1,QIU X.D.1,BEAUVAIS L.1,ZHANG X.N.1,SUN Y.Y.1,MENG R.1,CHU C.W.1

Affiliation:

1. Texas Center for Superconductivity, University of Houston, Houston, Texas 77204–5932, USA

Abstract

Samples with a nominal composition of Hg 1−x Pb x Ba 2 Ca 2 Cu 3 O 8+δ (x~0.1, 0.2, and 0.3) have been synthesized and characterized. The Pb-doping promotes the formation of the three CuO2-layer compound Hg 1−x Pb x Ba 2 Ca 2 Cu 3 O 8+δ, and reduces the release of Hg vapor at the synthesis temperature. The intergrain electric coupling is also significantly enhanced by the doping, resulting in lower normal-state resistivity and higher intergrain critical current density. The carrier concentration of the as-synthesized samples increases with the increase of x, ranging from underdoped (x~0) to overdoped (x≥0.2).

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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