Affiliation:
1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing 100190, China
2. Collaborative Innovation Center of Quantum Matter, Beijing 100190, China
Abstract
Graphene's unique physical and chemical properties have attracted substantial interest for various potential applications for electronics, spintronics, optoelectronics, and so on. Nanographene not only has the properties of graphene, but also has the special properties of edge state. Direct growth of nanographene on arbitrary substrate without catalyst has advantage of simplicity in device fabrications. In this paper, we review our recent progress on direct growth of nanographene on various substrates and using these nanographene as building blocks for electronic devices. The growth process is catalyst-free, scalable, and of low-temperature. Strain sensor, charge trapping memory (CTM) and resistance random access memory (RRAM) with excellent performances are demonstrated by tuning the size and density of as-grown nanographene on substrates.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Cited by
11 articles.
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