HIGH Tc “1 2 3” SUPERCONDUCTIVE FILMS ON SILICON SUBSTRATES

Abstract

YBa2Cu3O7 films have been deposited by pulse laser evaporation on silicon substrates with metal nitrides (AIN, Si 3 N 4, GaN) buffer layers. The film superconductivity is restored after annealing at 900°C in pure oxygen atmosphere. X-ray diffraction patterns confirm the presence of the orthorhombic phase and resistivity measurements versus temperature shows a resistive transition with an onset at 90 K and a complete zero resistance at 70 K.