EFFECT OF ELECTRON-ELECTRON INTERACTION NEAR THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS STUDIED WITHIN THE LOCAL DENSITY APPROXIMATION-Reference-Cited by-同舟云学术

EFFECT OF ELECTRON-ELECTRON INTERACTION NEAR THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS STUDIED WITHIN THE LOCAL DENSITY APPROXIMATION

Published:2012-01 Issue: Volume:11 Page:90-95
ISSN:2010-1945
Container-title:International Journal of Modern Physics: Conference Series
language:en
Short-container-title:Int. J. Mod. Phys. Conf. Ser.

Author:

HARASHIMA YOSUKE¹,SLEVIN KEITH¹

Affiliation:

1. Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043, Japan

Abstract

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

Publisher

World Scientific Pub Co Pte Lt

Link

https://www.worldscientific.com/doi/pdf/10.1142/S2010194512005958

Reference13 articles.

1. Metal-Insulator Transitions

2. Electron-electron interactions and the metal-insulator transition in heavily doped silicon

3. Absence of Diffusion in Certain Random Lattices

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