Improving the electrical properties of TiOx Schottky-type diode with an extra ZrO2 insulating layer-Reference-Cited by-同舟云学术

Improving the electrical properties of TiOx Schottky-type diode with an extra ZrO2 insulating layer

Published:2021-07-16 Issue:24 Volume:35 Page:2150412
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Fu Liping¹,Song Xiaoqiang¹²,Li Yonggang¹,Wu Zewei¹²,Fan Xiaolong¹,Gao Xiaoping³

Affiliation:

1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China

2. Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, China

3. Key Laboratory of Sensor and Sensing Technology, Gansu Province, Lanzhou 730000, China

Abstract

Titanium oxide has been considered a promising candidate for Schottky-type diode application. In this paper, an alternative approach for improving electrical properties of TiO[Formula: see text]-based Schottky-type diode has been demonstrated. Compared with the Ag/TiO[Formula: see text]/Ti structure Schottky-type diode, by embedding an extra ZrO2 insulating layer between the Ag/TiO[Formula: see text] interface, an extremely high rectifying ratio of 109 can be obtained in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device. The improvement of the electrical properties in the Ag/ZrO2/TiO[Formula: see text]/Ti structure device can be attributed to the localized formation of Ag metal conductive filaments in ZrO2 layer after switching on.

Funder

National Natural Science Foundation of China

Science and Technology Plan of Gansu Province

Key Research and Development Program of Gansu Province

Key Talent Project of Organization Department in Gansu Province

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984921504121

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