Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature-Reference-Cited by-同舟云学术

Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

Published:2021-04-09 Issue:17 Volume:35 Page:2150293
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Erkaboev U. I.¹²,Rakhimov R. G.²³,Sayidov N. A.²

Affiliation:

1. I. Karimov Street, 1-43, Namangan City, Uzbekistan

2. Namangan Institute of Engineering and Technology, Kasansay Street, Namangan 160115, Uzbekistan

3. Namangan Engineering-Construction Institute, I. A. Karimov Street, Namangan 106103, Uzbekistan

Abstract

The calculation of the coefficients of magneto-optical absorption in semiconductors at different temperatures and pressures is carried out. A formula for the temperature dependence of the oscillations of the combined density of states by the Kane dispersion law is obtained. Mathematical modeling has been carried out that determines the magneto-optical absorption coefficient in semiconductors in the presence of external influences. A new method for determining the magneto-optical absorption coefficient in semiconductors in the presence of pressure and temperature is proposed. The correspondence of simulation results with experimental data is shown.

Funder

Ministry of Innovative Development of the Republic of Uzbekistan

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984921502936

Reference45 articles.

1. The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors

2. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

3. On Temperature Dependence of Longitudinal Electrical Conductivity Oscillations in Narrow-gap Electronic Semiconductors

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