Affiliation:
1. Department of Electronic Engineering, Far East University, Hsin-Shih, Tainan 744, Taiwan, ROC
Abstract
Experimental predictions have been made for two-state bistable switching in both metal- GaAs native oxide-semiconductor-metal (MISM) and metal- GaAs native oxide-semiconductor- GaAs native oxide-metal (MISIM) structures for the first time, where the GaAs native oxides are formed by the liquid phase oxidation method. Bidirectional two-state switching (DIAC-like) and three-terminal operation are also shown in the photo-sensitive MISIM structure. Typical switching voltages for GaAs MISM and MISIM switches under 4 nm-thick native oxides are 7 V and 15 V, respectively. The corresponding voltage control efficiencies for MISM and MISIM switches are also as high as 3.944 and 7.04. The corresponding variation in voltage control efficiency, Δη=ΔVS/VH, is also as high as 2.5 at 150 nW incident light power.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics