Enhanced thermoelectric performance of p-type PbTe thin films deposited by magnetron sputtering via incorporating SnS

Author:

Zhang Manhong123,Liang Shaojun123,Zhu Hanming123,Yue Song123ORCID

Affiliation:

1. Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangzhou, 510632, China

2. Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Guangzhou, 510632, China

3. Department of Physics, Jinan University, Guangzhou, 510632, China

Abstract

Incorporating second phase or solid solution into the thermoelectric (TE) material matrix has been proven effective to promote its performance. Recent investigations manifest that the synergistical optimization of the electrical and phonon transport properties could be achieved in the PbTe–SnSe system. Being an analogue of SnSe and more environmental, here, SnS was introduced into p-type PbTe film through intermittent magnetron co-sputtering technique. Small amount SnS was observed to induce the shift of predominant orientation from the (200) plane to the (222) plane as well as distinct change in the surface morphology. After the quite possible SnS solid solution and appropriate subsequent annealing, the electrical conductivity and the power factor (PF) have been optimized prominently. In comparison with that of the pristine PbTe film, the maximum PF has been increased by 217% in the annealed film with the intermediate SnS content.

Funder

Fundamental Research Funds for the Central Universities

the Science and Technology Planning Project of Guangzhou

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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