Electrical performance of alumina films made in EB evaporation

Abstract

Alumina thin films deposited by electron beam (EB) evaporation are investigated with regard to their performance in high-temperature electrical insulators. The most important application is high-temperature sensors. The leakage behavior of EB-evaporated alumina thin films is investigated by analyzing the temperature dependence of the I–V characteristics of alumina thin films deposited on Pt/n-Si(100) substrates. The temperature is extending in the range from 300 K up to 1273 K. The results show that ln(J) increases linearly with the increasing electric field at high-temperature range, the trap depth of [Formula: see text] is 280 meV, the conductivity increases with the increasing temperature, while the resistivity decreases with the increasing temperature.