Optically tunable terahertz-band interference fringe shift based on indium oxide

Author:

Liu Jingyu1,Liu Bin1,Liu Dandan1,Ji Hongyu1,Shen Jingling1,Zhang Bo1

Affiliation:

1. Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Beijing Advanced Innovation Center for Imaging Theory and Technology, Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Beijing Key Laboratory of Metamaterials and Devices, Department of Physics, Capital Normal University, Beijing 100048, China

Abstract

An optically tunable terahertz (THz)-band shift in interference fringes based on an indium oxide structure was investigated. An interference phenomenon formed by the combination of partial-through measurements with a shift in the periodic peaks in a THz time-domain spectroscopy system was reported. When the THz beam passes through the edge of the material sample, equally spaced interference fringes are obtained in the frequency domain and these interference fringes can be varied using a 450 nm external continuous-wave laser. The peak of the THz interference fringe shifts by almost half a period. This work offers the ability to observe THz-band interference fringes in the frequency domain and shows that these interference fringes change with variations in the intensity of the applied excitation light.

Funder

National Natural Science Foundation of China

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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