GROWTH AND CHARACTERIZATION OF GaAs BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING TRIETHYLGALLIUM AND SOLID ARSENIC-Reference-Cited by-同舟云学术

GROWTH AND CHARACTERIZATION OF GaAs BY METALORGANIC CHEMICAL VAPOR DEPOSITION USING TRIETHYLGALLIUM AND SOLID ARSENIC

Published:2001-08-20 Issue:17n19 Volume:15 Page:733-736
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

ESPARZA A.¹,GALVÁN M.¹,CASTILLO R.¹,SÁNCHEZ M.¹,SIERRA R. PEÑA¹,ESCOBOSA A.¹

Affiliation:

1. CINVESTAV-IPN. Departamento de Ingeniería Eléctrica-Sección de Electrónica Del, Estado Sólido. Av. IPN # 2508, 0700 México D.F. Apdo. Postal 14-740, FAX: 5747114, USA

Abstract

GaAs-low compensated layers were grown by using an atmospheric MOCVD system. Solid arsenic and triethylgallium (TEG) were used as precursors. The layers exhibit an electron mobility greater than 30,000 cm2/V-sec at 77K for best growing conditions. This is the highest value reported until now for MOCVD GaAs grown by using non-arsine based alternative arsenic sources. The resulting layers were n-type with a minimum electron concentration of 1015 cm-3. The DLTS studies shown the EL2 electron level as the dominant trap with a concentration of 1013 cm-3.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984901002415

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