Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applications

Author:

He Bo1,Xu Jing2,Wang Hong Zhi1,Li Yao Gang1,Xing Huai Zhong1,Wang Chun Rui1,Zhang Qing Hong1,Ma Zhong Quan3

Affiliation:

1. Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Donghua University, 2999 Renmin Rd. North, Songjiang District, Shanghai 201620, China

2. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444, China

3. Department of Physics, Shanghai University, Shanghai 200444, China

Abstract

In this paper, copper-zinc-tin-sulfide ( Cu 2 ZnSnS 4) thin film was successfully fabricated by radio-frequency (RF) magnetron sputtering on glass substrate. The structural, optical and electrical properties of the film were studied by X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectrometer, field emission scanning electron microscope (FESEM), UV-VIS spectrophotometer and Hall effect measurement, respectively. The results show that Cu 2 ZnSnS 4 film is of good quality. A good nonlinear rectifying behavior is obtained for the GZO / Cu 2 ZnSnS 4 heterojunction. Under reverse bias, high photocurrent is obtained.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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