HIGH DIELECTRIC CONSTANT AND NONLINEAR ELECTRIC RESPONSE IN Bi2Sr2SmCu2Oy

Abstract

Samples with the nominal composition Bi 2 Sr 2 SmCu 2 O y were prepared by solid state reaction method. From the room temperature X-ray diffraction data, it was found that the sample is similar to the Bi-2212 structure. DC electrical resistivity was done from 80 K to 573 K and the impedance measurements were performed from 80 K to 573 K at different frequencies in the range of 10 kHz to 800 kHz. The sample Bi 2 Sr 2 SmCu 2O y has exhibited semiconducting behavior in the low temperature region (80 K to 343 K), metallic behavior in the temperature range of 343 K to 443 K and again semiconducting behavior above 443 K. The sample has exhibited the phenomenon of variable rangehopping mechanism (VRH). The physical parameters related to VRH such as localization length (a), hopping distance (R) and hopping energy (W) have been evaluated and discussed. The activation energy in the high temperature region (above 300 K) decreases with increasing frequency. Tan δ increases with increase in temperature (303 K-573 K), which is attributed to increased conductivity. The dielectric constant increases with increase in temperature. For a given temperature the value of ε is found to decrease with increase in frequency.