Fabrication of the electric double layer transistor with (La,Pr,Ca)MnO3 nanowall wire channel

Abstract

In the scaling down of electronic devices, functional oxides with strongly correlated electron system provide advantages to conventional semiconductors. We report the fabrication of the electric double layer transistor (EDLT) with the (La,Pr,Ca)MnO3 (LPCMO) epitaxial nanowall wire (NW) channel whose width was less than 100 nm. The width controlled LPCMO NWs were fabricated using an original nanofabrication technique: 3D nanotemplate pulsed laser deposition. The LPCMO NW EDLT was produced by employing 80 nm width NWs as channel. The produced LPCMO NW EDLT showed low leakage current. The metal-insulator transition property was successfully modulated by gating effect on the LPCMO NW EDLT.