Photocurrent performance and enhancement of opto-electronic properties of spray pyrolysis deposited ZnO thin films via V-doping

Author:

Derbali L.12ORCID,Bouhjar F.12,Derbali A.3

Affiliation:

1. Department of Physics, College of Science and Humanities, Al Quwaiiyah, Shaqra University, Saudi Arabia

2. Laboratoire de Photovoltaique (LPV), Centre de Recherches et des Technologies de l’Energie (CRTEn), Technopole de Borj Cedria, BP: 95, Hammam Lif 2050, Tunisia

3. Laboratory of Thin Films and Applications LPCMA, University Mohamed Khider Biskra, Algeria, BP 145 RP, 07000 Biskra, Algeria

Abstract

This study reports on the deposition of highly transparent conducting n-type zinc oxide (ZnO) thin films on FTO substrates, via an optimized doping process. Our work is focused on doping zinc oxide with vanadium (V) using spray pyrolysis technique and ensure the synthesis of nanoparticles-shaped ZnO, with an improved optical, microstructural and electrical properties for solar cells applications, as optical window material. Undoped and V-doped ZnO thin films, with careful optimized amounts (2, 4, 6 and 8 at.%), were grown at maintained 550C pre-heated substrate during the deposition process, which enables us to obtain nano-sized ZnO particles. We proved that 4 at.% is the optimum V content that enhances the crystallinity of the grown thin film noticeably. With an average transmittance of 80%, the deposited thin films revealed high transparency in the visible domain with a slight decrease in optical transmission which might result from additional scattering. UV-Visible analysis showed that increasing V amounts, a resulting decrease in the energy bandgap ([Formula: see text]) is obtained from 3.26[Formula: see text]eV to 3.17[Formula: see text]eV for 4 at.% of V content. Moreover, deep level defects in zinc oxide can be reduced with vanadium doping and consequently strengthen the UV emission. The UV emission peak intensity rises with increasing V-doping amount then decreases slightly at 8% of V content. The electrical properties measurements showed a decrease in resistivity from 2.8 10[Formula: see text][Formula: see text][Formula: see text][Formula: see text]⋅[Formula: see text]cm to 0.9 10[Formula: see text][Formula: see text][Formula: see text][Formula: see text]⋅[Formula: see text]cm when doping with 4 at.% of V. The crucial effect of the V-doping of ZnO was also demonstrated via the enhancement of carrier mobility that attains 38.5[Formula: see text]cm2/V[Formula: see text]⋅[Formula: see text]s at the optimum vanadium content. The photocurrent analysis revealed much higher visible light absorption in the V-doped zinc oxide thin films than that of undoped film. The photocatalytic activity enhancements are attributed to the lower recombination rate of the photogenerated electron-hole pairs, the narrowed bandgap, yielding a higher photocatalytic performance.

Funder

Deanship of Scientific Research, Shaqra University

Publisher

World Scientific Pub Co Pte Ltd

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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