MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES

Abstract

A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage by using these parameters.