The analysis of electron scattering among multiplying layer in EBAPS using optimized Monte Carlo method

Author:

Bai Jinzhou123ORCID,Bai Yonglin1,Hou Xun1,Cao Weiwei124,Yang Yang1,Wang Bo1,Bai Xiaohong1,Li Siqi25

Affiliation:

1. Key Laboratory of Ultrafast Photoelectric Diagnostic Technology, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences (CAS), Xi’an 710119, P. R. China

2. University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China

3. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, Shanxi, P. R. China

4. Key Laboratory for Physical Electronics and Devices of the Ministry, of Education and Shaanxi Key Laboratory of Information Photonic Technique, Xi’an Jiaotong University, Xi’an 710049, P. R. China

5. State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences (CAS), Xi’an 710119, P. R. China

Abstract

Electron bombarded Active Pixel Sensor (EBAPS) is well known for its low noise in low-light level imaging, high mechanical integration, and a relatively low cost. It plays an important role in areas of the industrial process as well as the fundamental scientific research. However, the performance of EBAPS is intensively influenced by the structural parameters (i.e. the acceleration voltage between cathode and anode, thickness of the passivation layer, etc.). Due to the influence of these factors mentioned above, the performance of EBAPS is restricted to achieve its best condition. Herein, a model based on the optimized Monte Carlo method was proposed for effectively analyzing the scattering behavior of electrons within the electron multiplier layer. Unlike traditional simulation, which only deals with the electron scattering in longitudinal, in this paper, we simulate the electron scattering character not only in horizontal but also vertical among the multiplier layer, which would react to the influence induced by structural parameters more complete and more precise. Based on the proposed model, an experimental prototype of EBAPS is built and its detection sensitivity achieves [Formula: see text] lux under spectral response of ultraviolet (UV) spectroscopy, which improved a lot from our former design. The proposed model can be used for analyzing the influence induced by structural parameters, which exhibit enormous potential for exploring the high-gain EBAPS.

Funder

West Light Foundation of the Chinese Academy of Sciences

Shaanxi Natural Science Basic Research Project

Equipment Pre-research Field Fund

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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1. A universal gain theory of the multiplying layer in EBCMOS based on elastic and inelastic scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-06

2. Performance benefits of charge-domain gain in active shortwave infrared targeting;Optical Engineering;2024-01-31

3. 基底均匀和梯度掺杂下EBCMOS电荷收集效率的优化模拟;Chinese Journal of Lasers;2024

4. The Impact of a Thick-Doping-Layer on the Charge Collection Efficiency in the P-Type Silicon Substrate of EBCMOS Devices;Journal of Nanoelectronics and Optoelectronics;2023-08-01

5. Characterising Backscattered Electrons in EBCMOS;IEEE Photonics Journal;2022-12

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