Phase control of optical bistability in an InGaN∕GaN quantum dot nanostructure

Abstract

In this paper, we propose a model for controlling the optical bistability in four-level [Formula: see text] quantum dot nanostructure which is embedded in a unidirectional ring cavity. [Formula: see text] quantum dot nanostructure is based on our recent paper [S. H. Asadpour, Z. Golsanamlou and H. R. Soleimani, Physica E 54 (2013) 45]. It is found that intensity threshold of optical bistability can be manipulated by signal intensity of applied fields. Moreover, we find that phase variation of terahertz signal field can also affect the behaviors of optical bistability and hysteresis loop.