Effects of hydrogen on diamond single crystal synthesized under high pressure and high temperature

Abstract

In this paper, diamond single crystals doped with LiH and boron additives were synthesized in [Formula: see text]–[Formula: see text] system under high pressure and high temperature. Under the fixed pressure condition, we found that the synthesis temperature increased slightly after the addition of LiH in the synthesis system. The {100}-orientated surface morphology was investigated by scanning electron microscopy (SEM). The nitrogen concentration in the obtained diamond was analyzed and evaluated using Fourier transmission infrared spectroscopy (FTIR). Furthermore, the electrical properties of Ib-type and boron-doped diamond before and after hydrogenation using Hall effect measurement, which suggested that the conductivity of diamond co-doped with hydrogen and boron was obviously enhanced than that of boron-doped diamond.