Affiliation:
1. University of Electronic Science and Technology of China, School of Optoelectronic Information, Chengdu 610054, China
2. University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu 610054, China
Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency (RF) plasma enhanced chemical vapor deposition (RF-PECVD) technique with silane (SiH[Formula: see text] as reactive gas. The influence of process parameters on the morphological characteristics and optical properties of a-Si:H thin films were systematically investigated. When the RF power density was taken as the only variable, it firstly improves the smoothness of the surface with increasing the RF power density below the value of 0.17 W/cm2, and then exhibits an obvious degradation at further power density. The refractive index, extinction coefficient, optical energy gap initially increase and reach a maximum at 0.17 W/cm2, followed by a significant decrease with further RF power density. When the RF power density was taken as the only variable, the surface of a-Si:H thin films become smoother by increasing the reaction pressure in the investigated range (from 50 Pa to 140 Pa), and the refractive index, extinction coefficient, optical energy gap increase with increasing of reaction pressure. The effect of RF power density and the reaction pressure on the morphological characteristics and optical properties of a-Si:H thin films was obtained, contributing to the further studies of the performance and applications of a-Si:H thin films.
Funder
973 Program of China
the National Natural Science foundation of China
Sichuan Provincial International Cooperation Project
Sichuan Provincial Science and Technology Support Project
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics