CHARACTERIZATION OF p- AND n-TYPE MnSi1.7 FILMS BY AUGER ELECTRON SPECTROSCOPY

Abstract

P- and n-type higher manganese silicide ( MnSi 1.7) films are characterized by Auger electron spectroscopy (AES). The relationship between Auger chemical shift and electrical property of the film has been established. Compared with pure Mn , the peak positions of Mn [MVV] Auger spectra in p- and n-type MnSi 1.7 films move to higher energy regions with +2.0 and +7.0 eV, respectively. New peaks around 50 eV in the Mn [MVV] Auger spectra, and 600, 654, and 705 eV in the Mn [LMM] Auger spectra appear in MnSi 1.7 films prepared by magnetron sputtering. These new peaks are considered to arise from iron impurities which are unintentionally introduced from the Mn–Si alloy target and during the magnetron sputtering process. The intensities of these new peaks are much stronger for the n-type MnSi 1.7 film. Compared with pure Si , the peak positions of Si [LVV] Auger spectra move to higher energy regions with +1.0 eV for both p- and n-type MnSi 1.7 films. However, the peak positions of Si [KLL] Auger spectra in p- and n-type MnSi 1.7 films move to lower energy regions with energy shifts between -1.0 and -3.0 eV.