Improving the performance of CZTS battery with environmental buffer layer and analyzing the effect of MoS2 layer on the battery

Abstract

Cu2ZnSnS4 (CZTS) materials have been widely investigated due to their excellent properties in solar cell applications. The common reference structure for CZTS cells is Al:ZnO(AZO)/i-ZnO/CdS/CZTS, but it is critical to find a suitable buffer layer material to replace toxic cadmium (Cd). In addition, the efficiency of CZTS cells is improved by improving the doping type (n or p) and doping concentration of MoS2 generated during the manufacturing process. wxAMPS was used to simulate the performance of a CZTS battery with an Al:ZnO/i-ZnO/Zn(O,S)/CZTS/(MoS2) structure. The performance of batteries using Zn(O,S) and CdS as buffer layers was compared. The optimal thickness of CZTS layer and the doping concentration of CZTS layer were calculated, and the doping type and concentration of MoS2 layer were analyzed and the performance of the battery was improved by optimizing the solar cell parameters. This work provides novel ideas for designing and manufacturing higher performance solar cells.