ANALYSIS OF REDISTRIBUTION OF RADIATION DEFECTS TAKING INTO ACCOUNT DIFFUSION AND SEVERAL SECONDARY PROCESSES

Abstract

In this paper, we analyzed the evolution of concentration of radiative defects, which is generated in a semiconductor sample during ion implantation. Approximate analytical approach for the description of the evolution of concentration of radiative defects with account diffusion and some secondary processes (recombination of the point defects and generation of divacancies) has been used. Discontinuity of the ions in space and time has been also accounted. The main results are: (i) the estimation of dependencies of the defect concentration from depth at different values of dose (irradiation time), (ii) the different amorphization doses from the density of current of the ions for the more common case in comparison with those considered in literature. As an example, we consider the implantation of ions of neon into a sample of the silicon.