Behaviors of the multiple interface states in photonic crystal heterostructure with frequency-dependent dielectric functions

Abstract

In this paper, Dirac point method is used to study the interface state of one-dimensional photonic crystal heterojunction [Formula: see text] containing dispersive materials GaAs. We found that the energy levels of the interface states satisfy a simple sinusoidal function. We investigate the variation of the energy levels of the interface states with the incident angle, it is found that these interface states move toward high-frequency with the increase of the incident angle. At the same time, it is found that there is an extra localized band and it is further proved that the extra band corresponds to the defect band, and the energy levels of the defect band possess the same behavior with those of interface states.