ELECTROLUMINESCENCE ENHANCEMENT IN A DELTA-DOPED QUANTUM WELL OF A BIPOLAR RESONANT TUNNELING DIODE
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Published:1995-06-20
Issue:14
Volume:09
Page:849-858
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ISSN:0217-9849
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Container-title:Modern Physics Letters B
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language:en
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Short-container-title:Mod. Phys. Lett. B
Affiliation:
1. Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511, Singapore
Abstract
An analytical model of a δ-doped quantum well is developed. The results show that by using δ-doped quantum well structures, the area densities of the electrons and holes in the conduction and valence bands, respectively, can be increased by four orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of δ-doped quantum well.
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics