Huang–Rhys Factor of CdTe Semiconductors Doped with Arsenic and Antimony

Abstract

By using the evolution operator method, we report a careful derivation of the Huang–Rhys factor, based on the Fröhlich continuum model of polarons, for cadmium telluride (CdTe) semiconductors, doped with arsenic (As) and antimony (Sb) acceptors. The calculated values of the Huang–Rhys factor, agree well with the experimental data for the bands at 1.45 eV and 1.54 eV, at large enough (16.5 nm) and zero donor–acceptor pair separation, respectively. They predicted the form of the bands, and provide new insight for the interpretation of the experimental data in terms of sub-Poissonian or super-Poissonian distributions, determining also the number of emitted phonons involved in the recombination process.