Relaxation of the electric resistance in YBa2Cu3O7−x single crystals at room temperature

Abstract

In this paper, the relaxation of the electrical resistance of a YBa[Formula: see text]Cu[Formula: see text]O[Formula: see text] single crystal that is kept for a long time at room temperature in air atmosphere is investigated. It is shown that with increasing time of keeping, relaxation of the electrical resistivity at room temperature is observed, controlled by a single channel and the classical oxygen ion diffusion mechanisms. The faster transport of oxygen ions in the initial stage of the implantation process can take place along one-dimensional nonstoichiometric vacancies in a single-file diffusion mode. The final stage of oxygen transport in this compound is described by an ordinary classical diffusion mechanism.