NUCLEATION AND GROWTH OF DIAMOND FILM ON POROUS SILICON SUBSTRATE-Reference-Cited by-同舟云学术

NUCLEATION AND GROWTH OF DIAMOND FILM ON POROUS SILICON SUBSTRATE

Published:1999-02-28 Issue:05 Volume:13 Page:159-165
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

LIAO Y.¹²,FANG R. C.²,YE F.²,SHAO Q. Y.²,WANG G. Z.¹²

Affiliation:

1. Structure Research Laboratory, University of Science and Technology of China, Hefei, 230026, China

2. Department of Physics, University of Science and Technology of China, Hefei, 230026, China

Abstract

Nucleation and growth of diamond film on porous silicon are investigated in a hot-filament chemical vapor deposition system. The characters of diamond film are determined by scanning electronic microscopy, Raman spectra and X-ray photoelectron spectroscopy. A nucleation density of 3.6×107 cm -2 is obtained. We find that almost all nuclei occur at the edge of the etched pores. The diamond film directly deposits on porous silicon substrate without the intermediate and no strains are found in the film.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984999000221

Reference12 articles.

1. Diamond-Ceramic Coating of the Future

2. Synthesis of diamonds by use of microwave plasma chemical-vapor deposition: Morphology and growth of diamond films

3. Influence of substrate topography on the nucleation of diamond thin films

4. Diamond deposition on porous silicon by plasma-assisted CVD

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