Spin polarization current induced by hydrogen hybrid within closed hexagon graphene nanoribbon devices-Reference-Cited by-同舟云学术

Spin polarization current induced by hydrogen hybrid within closed hexagon graphene nanoribbon devices

Published:2016-10-10 Issue:27 Volume:30 Page:1650333
ISSN:0217-9849
Container-title:Modern Physics Letters B
language:en
Short-container-title:Mod. Phys. Lett. B

Author:

Ren Yun¹,He Jun²,Fan Zhi-Qiang³,Zhu Xiang¹,Liu Yi¹,Long Meng-Qiu⁴,Xiao Ke¹

Affiliation:

1. Research Institute of Stoichiometry and Reference Materials, Hunan Institute of Metrology and Test, Changsha 410014, China

2. School of Science, Hunan University of Technology, Zhuzhou 412008, China

3. School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China

4. Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha 410083, China

Abstract

We investigate the spin-polarized electronic transport properties of the closed hexagon graphene nanoribbon devices with different hydrogen hybrid of edge carbon atoms by using non-equilibrium Green’s functions in combination with the density functional theory. The results show that an excellent molecular switching with on/off ratio over 106, perfect spin-filtering effect and negative differential resistance effect have been observed. A detailed analysis has been presented.

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation of China

Scientific Research Fund of Hunan Provincial Education Department of China

Science and technology project of Hunan Province

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217984916503334

Reference33 articles.

1. Graphene-ferroelectric hybrid devices for multi-valued memory system

2. Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

3. Spin Current Switching and Spin-Filtering Effects in Mn-Doped Boron Nitride Nanoribbons

4. The weak π − π interaction originated resonant tunneling and fast switching in the carbon based electronic devices

5. Electronic structures, field effect transistor and bipolar field-effect spin filtering behaviors of functionalized hexagonal graphene nanoflakes

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