MAGNETIC PROPERTIES OF Fe0.95Co0.05Si2 SEMICONDUCTING FILM

Author:

HAN Y. P.12,WANG X. J.3,HOU Q. R.4,WANG Q. W.1,WANG J. X.2

Affiliation:

1. Key Laboratory of Bio-based Material Science and Technology, Northeast Forestry University, He Xing Road No. 26, Harbin 150040, China

2. Department of Physics, Colleage of Science, Northeast Forestry University, He Xing Road No. 26, Harbin 150040, China

3. Center for Condensed Matter Science and Technology, Department of Physics, Harbin Institute of Technology University, 92 West Dazhi Street, Harbin 150001, China

4. Department of Physics, Tsinghua University, Beijing 100084, China

Abstract

The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about 380 K. The possible reason for the ferromagnetism of the β- Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

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